dated : 23/11/2006 ? semtech electronics ltd. ( subsidiary of sino-tech internati onal holdings limited, a company listed on the hong kong stock exchange, stock code: 724 ) RB751S-40 silicon epitaxial planar schottky barrier diode for high speed switching and detection applications features ? small surface mounting type ? low reverse current and low forward voltage ? high reliability absolute maximum ratings (t a = 25 o c) parameter symbol value unit peak reverse voltage v rm 40 v reverse voltage v r 30 v mean rectifying current i o 30 ma peak forward surge current ( 60 hz, 1 cycle ) i fsm 200 ma junction temperature t j 125 o c storage temperature range t s - 40 to + 125 o c characteristics at t a = 25 o c parameter symbol typ. max. unit forward voltage at i f = 1 ma v f - 0.37 v reverse current at v r = 30 v i r - 0.5 a capacitance between terminals at v r = 1 v, f = 1 mhz c t 2 - pf note: esd sensitive product handling required. anode 2 top view marking code: " d " simplified outline sod-523 and symbol 1 d 2 pinning 1 pin cathode description
dated : 23/11/2006 ? semtech electronics ltd. ( subsidiary of sino-tech internati onal holdings limited, a company listed on the hong kong stock exchange, stock code: 724 ) RB751S-40
dated : 23/11/2006 ? semtech electronics ltd. ( subsidiary of sino-tech internati onal holdings limited, a company listed on the hong kong stock exchange, stock code: 724 ) RB751S-40 package outline plastic surface mounted package; 2 leads sod-523 mm a e b a c unit p d a b cdeh v h all round e e p 0.70 0.60 0.4 0.3 0.135 0.127 1.25 1.15 0.85 0.75 1.7 1.5 0.1 5 o
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